Warning: "continue" targeting switch is equivalent to "break". Did you mean to use "continue 2"? in /homepages/23/d610506946/htdocs/ai/wp-content/plugins/styles/classes/csstidy/class.csstidy.php on line 854

Archive | February, 2019

NVM ReRAM Memory Cell Targets Edge AI

Researchers have demonstrated a chip that integrates resistive RAM with silicon computing units and new memory resiliency features that provide 2.3x the capacity of existing ReRAM.Target applications include energy-efficient, smart-sensor nodes to support artificial intelligence on the internet of things…

read entire article on EETimes

powered by uNaice.de